期刊
JOURNAL OF APPLIED PHYSICS
卷 105, 期 3, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3074328
关键词
amorphous semiconductors; conducting materials; electrodes; elemental semiconductors; semiconductor growth; semiconductor thin films; silicon; solar cells; sputter deposition; thin film devices
资金
- National Renewable Energy Laboratory Thin Film Photovoltaic Partnership Program
- [5-44205-06]
Amorphous silicon (a-Si) based thin film solar cell grown on flexible stainless steel substrate is one of the most promising energy conversion devices in the future. This type of solar cell uses a transparent conductive oxide (TCO) film as top electrode. It has been a widely accepted opinion that the radio frequency sputtering deposition of the TCO film produces a higher yield than direct current sputtering, and the reason is not clear. Here we show that the damage to the solar cell during the sputtering process is caused by a reverse bias applied to the n-i-p junction. This reverse bias is related to the characteristics of plasma discharge. The mechanism we reveal may significantly affect the solar cell process.
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