期刊
JOURNAL OF APPLIED PHYSICS
卷 106, 期 12, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3251420
关键词
elemental semiconductors; fluorescence; insulating thin films; lead compounds; semiconductor-insulator boundaries; silicon; sol-gel processing; stress-strain relations; thermal stresses
资金
- National Science Foundation [88206, CMMI 07-26742]
- U. S. Department of Energy, Division of Materials Sciences [DEFG02-91ER45439]
- Frederick Seitz Materials Research Laboratory
A fluorescence-based digital image correlation (DIC) technique is used to characterize the in-plane strain development of blanket sol-gel derived lead zirconate titanate thin films deposited on platinized silicon substrates. The in-plane strain is also measured within film line features patterned via a mediated octadecyltrichlorosilane (ODS) monolayer. The results indicate that the selective film failure induced by the mediated ODS layer succeeds in slightly reducing the in-plane strain transverse to the line feature direction (similar to 25% lower), while remaining nearly the same as the blanket film case in the direction parallel to the line direction. Additional in-plane stress estimates from wafer curvature measurements for the two film configurations (blanket and ODS patterned) were consistent with the DIC measured strain results.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据