期刊
JOURNAL OF APPLIED PHYSICS
卷 106, 期 10, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3259412
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资金
- Hubert Curien Partnership PAI Brancusi [14762ZH]
- Romanian Ministry for Education and Research [12-112/2008]
We report on the formation and transport properties of ZnO thin films which are grown by pulsed-electron beam deposition under a low residual oxygen pressure (10(-5) mbar). ZnO films presenting metallic conductivity at room temperature, and a metal-semiconductor transition at low temperature, were epitaxially grown on Al(2)O(3) single crystal substrates for growth temperatures in the 300-450 degrees C range. These results have been interpreted through the quantum corrections to conductivity in a disordered oxide conductor, implying first a high density of carriers leading to degenerate semiconductor ZnO films, and then a sufficient disorder in these films. These characteristics could be related to the nature of the ZnO films formed by pulsed-electron deposition: a high density of carriers related to an oxygen deficiency in the films and a high density of defects related to the high deposition rate of the pulsed-electron beam deposition method. (C) 2009 American Institute of Physics. [doi:10.1063/1.3259412]
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