期刊
JOURNAL OF APPLIED PHYSICS
卷 104, 期 10, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3021142
关键词
copper; electrical resistivity; electroluminescence; electron density; ferromagnetic materials; gallium compounds; III-V semiconductors; II-VI semiconductors; light emitting diodes; magnetic thin films; magnetisation; semiconductor growth; semiconductor thin films; semimagnetic semiconductors; vacuum arcs; vacuum deposited coatings; vacuum deposition; wide band gap semiconductors; zinc compounds
资金
- Ministry of Education (Singapore) [ARC 2/06]
Ferromagnetic and highly conductive copper doped ZnO (ZnO:Cu) films were prepared by filtered cathodic vacuum arc technique. By employing a biasing technique during growth, the electron concentration and resistivity of the ZnO:Cu films can be as high as 10(20) cm(-3) and 5.2x10(-3) Omega cm, respectively. The ferromagnetic behavior is observed in all the conductive films, but its magnetization is quenched with an increment in carrier concentration, suggesting that carrier induced exchange is not directly responsible for the ferromagnetism. Heterojunction light emitting diodes have been fabricated using the conductive ZnO:Cu layer as an electron injector and a p-type GaN as hole injector. Electroluminescence can be detected from the devices.
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