相关参考文献
注意：仅列出部分参考文献，下载原文获取全部文献信息。Lack of charge offset drift is a robust property of Si single electron transistors
Emmanouel Hourdakis et al.
APPLIED PHYSICS LETTERS (2008)
Charge offset stability in tunable-barrier Si single-electron tunneling devices
Neil M. Zimmerman et al.
APPLIED PHYSICS LETTERS (2007)
Single electron tunneling transistor with tunable barriers using silicon nanowire metal-oxide-semiconductor field-effect transistor
A Fujiwara et al.
APPLIED PHYSICS LETTERS (2006)
Low-leakage superconducting tunnel junctions with a single-crystal Al2O3 barrier
S Oh et al.
SUPERCONDUCTOR SCIENCE & TECHNOLOGY (2005)
Counting individual trapped electrons on liquid helium
G Papageorgiou et al.
APPLIED PHYSICS LETTERS (2005)
Electrical metrology with single electrons
NM Zimmerman et al.
MEASUREMENT SCIENCE AND TECHNOLOGY (2003)
Silicon single-electron devices
Y Takahashi et al.
JOURNAL OF PHYSICS-CONDENSED MATTER (2002)
Growth characteristics of Al oxide formed by ozone in magnetic tunnel junctions
BG Park et al.
JOURNAL OF APPLIED PHYSICS (2002)
Excellent charge offset stability in a Si-based single-electron tunneling transistor
NM Zimmerman et al.
APPLIED PHYSICS LETTERS (2001)
Non-Gaussian distribution of nearest-neighbour Coulomb peak spacings in metallic single-electron transistors
M Furlan et al.
EUROPHYSICS LETTERS (2000)
分享论文
