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G. Mavrou et al.
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Gate dielectric formation and MIS interface characterization on Ge
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In-depth investigation of the mechanisms impacting C-V/G-V characteristics of Ge/GeON/HfO2/TiN stacks by electrical modeling
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Experimental and theoretical study of Ge surface passivation
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Improvement of interfacial properties with interfacial layer in La2O3/Ge structure
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Materials and electrical characterization of molecular beam deposited CeO2 and CeO2/HfO2 bilayers on germanium
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Threshold voltage shifts in Si passivated (100)Ge p-channel field effect transistors:: Insights from first-principles modeling
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Interface engineering for Ge metal-oxide-semiconductor devices
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Germanium MOSFETs with CeO2/HfO2/TiN gate stacks
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H2S exposure of a (100)Ge surface:: Evidences for a (2x1) electrically passivated surface
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Atomic layer deposition of insulating nitride interfacial layers for germanium metal oxide semiconductor field effect transistors with high-κ oxide/tungsten nitride gate stacks
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Cubic-to-monoclinic phase transition during the epitaxial growth of crystalline Gd2O3 films on Ge(001) substrates
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Fermi-level pinning and charge neutrality level in germanium
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In situ chemical and structural investigations of the oxidation of Ge(001) substrates by atomic oxygen
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IEEE ELECTRON DEVICE LETTERS (2006)
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Intrinsic carrier effects in HfO2-Ge metal-insulator-semiconductor capacitors -: art. no. 223507
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Complex admittance analysis for La2Hf2O7/SiO2 high-κ dielectric stacks
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APPLIED PHYSICS LETTERS (2004)
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Electrical characteristics of high quality La2O3 gate dielectric with equivalent oxide thickness of 5 Å
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