相关参考文献
注意：仅列出部分参考文献，下载原文获取全部文献信息。Growth of highly strain-relaxed Ge1-xSnx/virtual Ge by a Sn precipitation controlled compositionally step-graded method
Shotaro Takeuchi et al.
APPLIED PHYSICS LETTERS (2008)
Fabrication of p-MOSFETs on germanium epitaxially grown on gallium arsenide substrate by chemical vapor deposition
Ming Zhu et al.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY (2008)
Advances in SiGeSn technology
Richard Soref et al.
JOURNAL OF MATERIALS RESEARCH (2007)
Relaxed, high-quality InP on GaAs by using InGaAs and InGaP graded buffers to avoid phase separation
Nathaniel J. Quitoriano et al.
JOURNAL OF APPLIED PHYSICS (2007)
Growth of GaAs with orientation-patterned structures for nonlinear optics
Xiaojun Yu et al.
JOURNAL OF CRYSTAL GROWTH (2007)
Perfectly tetragonal, tensile-strained Ge on Ge1-ySny buffered Si(100)
Y. -Y. Fang et al.
APPLIED PHYSICS LETTERS (2007)
Subnanometer-equivalent-oxide-thickness germanium p-metal-oxide-semiconductor field effect transistors fabricated using molecular-beam-deposited high-k/metal gate stack
A Ritenour et al.
APPLIED PHYSICS LETTERS (2006)
Ge n-MOSFETs on lightly doped substrates with high-κ dielectric and TaN gate
WP Bai et al.
IEEE ELECTRON DEVICE LETTERS (2006)
High-performance, tensile-strained Ge p-i-n photodetectors on a Si platform -: art. no. 103501
JF Liu et al.
APPLIED PHYSICS LETTERS (2005)
Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors
ML Lee et al.
JOURNAL OF APPLIED PHYSICS (2005)
Silicidation-induced band gap shrinkage in Ge epitaxial films on Si
JF Liu et al.
APPLIED PHYSICS LETTERS (2004)
A 90-nm logic technology featuring strained-silicon
SE Thompson et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2004)
Strained Si/strained Ge dual-channel heterostructures on relaxed Si0.5Ge0.5 for symmetric mobility p-type and n-type metal-oxide-semiconductor field-effect transistors
ML Lee et al.
APPLIED PHYSICS LETTERS (2003)
Hole mobility enhancements in strained Si/Si1-yGey p-type metal-oxide-semiconductor field-effect transistors grown on relaxed Si1-xGex (x<y) virtual substrates
CW Leitz et al.
APPLIED PHYSICS LETTERS (2001)
Strained Ge channel p-type metal-oxide-semiconductor field-effect transistors grown on Si1-xGex/Si virtual substrates
ML Lee et al.
APPLIED PHYSICS LETTERS (2001)
Carrier mobilities and process stability of strained Si n- and p-MOSFETs on SiGe virtual substrates
MT Currie et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2001)
Fabrication and analysis of deep submicron strained-Si N-MOSFET's
KK Rim et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2000)
Metal-organic chemical vapor deposition of single domain GaAs on Ge/GexSi1-x/Si and Ge substrates
SM Ting et al.
JOURNAL OF APPLIED PHYSICS (2000)
分享论文
