4.6 Article

The temperature dependence of the refractive indices of GaN and AlN from room temperature up to 515 °C

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JOURNAL OF APPLIED PHYSICS
卷 104, 期 10, 页码 -

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AMER INST PHYSICS
DOI: 10.1063/1.3021148

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aluminium compounds; gallium compounds; III-V semiconductors; refractive index; wide band gap semiconductors

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  1. Ministry of Education, Culture, Sports, Science and Technology, Japan [C09]

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The temperature dependence of the refractive indices of GaN and AlN was investigated in the wavelength range from the near band edge (367 nm for GaN and 217 nm for AlN) to 1000 nm and the temperature range from room temperature to 515 degrees C. Optical interference measurements with vertical incident configuration were employed to precisely evaluate the ordinary refractive indices.

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