期刊
JOURNAL OF APPLIED PHYSICS
卷 104, 期 5, 页码 -出版社
AIP Publishing
DOI: 10.1063/1.2968441
关键词
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资金
- EC [NMP4-CT-2004-500355]
- DGI Spain [CTQ2006-06333/BQU]
- Dursi Catalunya [2005 SGR 00591]
- NoE PolyNet [UE ICT 214006]
- MNiI [T08E 1327]
- KTP [1326-A02]
In this paper we present that the surface energy of silicon dioxide employed as the dielectric in bottom gate organic field effect transistors has large impact on the device performance. By the use of the zone-casting simple solution processing technique, we ensured reproducibility of active layer preparation confirmed by the atomic force microscopy and x-ray diffraction that showed high crystalline quality. Electrical measurements revealed that charge carrier mobility based on highly ordered zone-cast tetrakis-(octadecylthio)-tetrathiafulvalene layer was increased 30 times to 0.2 cm(2)/V s, when dielectric surface energy decreased from 51.8 to 40.1 mN/m. (C) 2008 American Institute of Physics.
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