期刊
JOURNAL OF APPLIED PHYSICS
卷 104, 期 12, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3042216
关键词
gallium arsenide; III-V semiconductors; indium compounds; scanning tunnelling microscopy; semiconductor quantum dots
资金
- Deutsche Forschungsgemeinschaft [Sfb 296, Sfb 787, Da408/12]
- Alexander von Humboldt Foundation
Using plan-view and cross-sectional scanning tunneling microscopy, the shape and composition of InAs/GaAs quantum dots are investigated before and after capping by GaAs. During capping, the original pyramidally shaped quantum dots become truncated, resulting in a flat (001) top facet and steeper side facets. The InAs quantum dots are found to be intermixed at their top with GaAs due to material rearrangement. Since the bottom interface of quantum dots and wetting layer is always sharp, this intermixing occurs during capping and not during quantum dot growth. Considering strain energies, a model for the capping is presented.
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