期刊
JOURNAL OF APPLIED PHYSICS
卷 104, 期 3, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.2968442
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资金
- Spanish Ministry of Education [MAT2004-2875, NAN04/09109/C04/2, Consolider-CSD 2006-19]
- Community of Madrid [GR/MAT/0042/2004, S-0505/ESP-0200]
Thermal decomposition of wurtzite (0001)-oriented GaN was analyzed: in vacuum, under active N exposure, and during growth by rf plasma-assisted molecular beam epitaxy. The GaN decomposition rate was determined by measurements of the Ga desorption using in situ quadrupole mass spectrometry, which showed Arrhenius behavior with an apparent activation energy of 3.1 eV. Clear signatures of intensity oscillations during reflection high-energy electron diffraction measurements facilitated complementary evaluation of the decomposition rate and highlighted a layer-by-layer decomposition mode in vacuum. Exposure to active nitrogen, either under vacuum or during growth under N-rich growth conditions, strongly reduced the GaN losses due to GaN decomposition. (C) 2008 American Institute of Physics.
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