The resistance to plasma-induced damage of various nanoporous, ultra low-kappa porous SiCOH films used as interconnect dielectric materials in integrated circuits was studied. These films are susceptible to damage by plasma processes used during nanofabrication. The dielectric constants and chemical compositions of four dielectric films were correlated with measured amounts of plasma damage. Films deposited with higher carbon content in the form of Si-CH(3) and Si(CH(3))(2) bonding exhibited less plasma damage than similar films with lower carbon content. (C) 2008 American Institute of Physics. [DOI: 10.1063/1.3006438]
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据