相关参考文献
注意：仅列出部分参考文献，下载原文获取全部文献信息。Interfacial structure and defect analysis of nonpolar ZnO films grown on R-plane sapphire by molecular beam epitaxy
P. Vennegues et al.
JOURNAL OF APPLIED PHYSICS (2008)
Non-polar a-plane ZnMgO/ZnO quantum wells grown by molecular beam epitaxy
J-M Chauveau et al.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2008)
Spin-exchange interaction in ZnO-based quantum wells
B. Gil et al.
PHYSICAL REVIEW B (2006)
Internal electric field in wurtzite ZnO/Zn0.78Mg0.22O quantum wells -: art. no. 241305
C Morhain et al.
PHYSICAL REVIEW B (2005)
Growth of high-quality ZnMgO epilayers and ZnO/ZnMgO quantum well structures by radical-source molecular-beam epitaxy on sapphire -: art. no. 091903
S Sadofev et al.
APPLIED PHYSICS LETTERS (2005)
Optical properties of excitons in ZnO-based quantum well heterostructures
T Makino et al.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2005)
ZnMgO epilayers and ZnO-ZnMgO quantum wells for optoelectronic applications in the blue and UV spectral region
T Gruber et al.
APPLIED PHYSICS LETTERS (2004)
Slip systems and misfit dislocations in InGaN epilayers
S Srinivasan et al.
APPLIED PHYSICS LETTERS (2003)
Domain epitaxy: A unified paradigm for thin film growth
J Narayan et al.
JOURNAL OF APPLIED PHYSICS (2003)
Growth modes and microstructures of ZnO layers deposited by plasma-assisted molecular-beam epitaxy on (0001) sapphire
F Vigué et al.
JOURNAL OF APPLIED PHYSICS (2001)
Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes
P Waltereit et al.
NATURE (2000)
分享论文
