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T. H. Scabarozi et al.
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V2AlC, V4AlC3-x (x ≈ 0.31), and V12Al3C8:: Synthesis, crystal growth, structure, and superstructure
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Synthesis and compressibility of Ti3(Al,Sn0.2)C2 and Ti3Al(C0.5,N0.5)2
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Electron-phonon coupling in Mn+1AXn-phase carbides
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High-pressure x-ray diffraction study of Ta4AlC3
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On the heat capacities of M2AlC (M = Ti, V, Cr) ternary carbides
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Electrical transport, thermal transport, and elastic properties of M2AlC (M=Ti, Cr, Nb, and V) -: art. no. 115120
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Epitaxial Ti2GeC, Ti3GeC2, and Ti4GeC3 MAX-phase thin films grown by magnetron sputtering
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X-ray absorption spectroscopy, EELS, and full-potential augmented plane wave study of the electronic structure of Ti2AlC, Ti2AlN, Nb2AlC, and (Ti0.5Nb0.5)(2)AlC
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Elastic and electronic properties of select M2AX phases
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Electronic, thermal, and elastic properties of Ti3Si1-xGexC2 solid solutions -: art. no. 085104
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Alumina forming high temperature silicides and carbides
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Mn+1AXn phases in the Ti-Si-C system studied by thin-film synthesis and ab initio calculations -: art. no. 165401
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Low-temperature transport properties of nanolaminates Ti3AlC2 and Ti4AlN3 -: art. no. 235108
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Long time oxidation study of Ti3SiC2,Ti3SiC2/SiC, and Ti3SiC2/TiC composites in air
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Theory of the ternary layered system Ti-Al-N
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Magnetotransport properties of the ternary carbide Ti3SiC2:: Hall effect, magnetoresistance, and magnetic susceptibility -: art. no. 035113
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Ab initio geometry optimization and ground state properties of layered ternary carbides Ti3MC2 (M = Al, Si and Ge)
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Ab initio calculations of the mechanical properties of Ti3SiC2
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