Marked improvement in electroluminescence characteristics of organic light-emitting diodes using an ultrathin hole-injection layer of molybdenum oxide

We show that the performance of organic light-emitting diodes (OLEDs) is markedly improved by optimizing the thickness of a hole-injection layer (HIL) of molybdenum oxide (MoO(3)) inserted between indium tin oxide and N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4'-diamine (alpha-NPD). From results of the electroluminescence (EL) characteristics of OLEDs with various thicknesses of a MoO(3) HIL, we found that the OLED with a 0.75-nm-thick MoO(3) HIL had the lowest driving voltage and the highest power conversion efficiency among the OLEDs. Moreover, the operational lifetime of the OLED was improved by about a factor of 6 by using the 0.75-nm-thick MoO(3) HIL. These enhanced EL characteristics are attributable to the formation of an Ohmic contact at the interfaces composed of ITO/MoO(3)/alpha-NPD. (C) 2008 American Institute of Physics.