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注意：仅列出部分参考文献，下载原文获取全部文献信息。On the electric-dipole contribution to the valence-band offsets in semiconductor-oxide heterostructures
Winfried Moencha
APPLIED PHYSICS LETTERS (2007)
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Band alignment between (100) Si and amorphous LaAlO3, LaScO3, and Sc2O3:: Atomically abrupt versus interlayer-containing interfaces -: art. no. 032104
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Band alignment in ultrathin Hf-Al-O/Si interfaces
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Impact of interface structure on Schottky-barrier height for Ni/ZrO2(001) interfaces -: art. no. 132103
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Measurement of the band offsets between amorphous LaAlO3 and silicon
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An accurate determination of barrier heights at the HfO2/Si interfaces
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Photoemission study of energy-band alignment for RuOx/HfO2/Si system
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Band alignment issues related to HfO2/SiO2/p-Si gate stacks
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Energy-band alignments at ZrO2/Si, SiGe, and Ge interfaces
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Bandgap narrowing in strained SiGe on the basis of electrical measurements on Si/SiGe/Si hetero bipolar transistors
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