5 mu m thick SmCo films were deposited onto Si substrates using triode sputtering. A study of the influence of deposition temperature (T-dep <= 600 degrees C) on the structural, magnetic, and mechanical properties has shown that optimum properties [highest degree of in-plane texture, maximum in-plane coercivity and remanence (1.3 and 0.8 T, respectively), and no film peel-off] are achieved for films deposited at the relatively low temperature of 350 degrees C. This temperature is compatible with film integration into microelectromechanical systems. The deposition rate was increased from 3.6 to 18 mu m/h by increasing the surface area of the target from 7 to 81 cm 2 while keeping the target potential fixed. Mechanically intact films could be prepared by deposition onto prepatterned films or deposition through a mask. (C) 2008 American Institute of Physics.
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