期刊
JOURNAL OF APPLIED PHYSICS
卷 104, 期 4, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.2968546
关键词
-
资金
- National Natural Science Foundation of China [60476021, 69825107]
- Fund for Scientific Research, Flanders (FWO)
- Concerted Action of the KULeuven [GOA/2004/02]
- Inter-university Attraction Pole [IUAPP6/42]
- Center of Excellence Programme [INPAC EF/05/005]
- Bilateral Cooperation between Flanders and China [BIL 07/03]
This paper presents a study of the transformation of high-temperature AlN (HT-AlN) interlayer (IL) and its effect on the strain relaxation of Al(0.25)Ga(0.75)N/HT-AlN/GaN. The HT-AlN IL capped with Al(0.25)Ga(0.75)N transforms into AlGaN IL in which the Al composition increases with the HT-AlN IL thickness while the total Ga content keeps nearly constant. During the HT-AlN IL growth on GaN, the tensile stress is relieved through the formation of V trenches. The filling up of the V trenches by the subsequent Al(0.25)Ga(0.75)N growth is identified as the Ga source for the IL transformation, whose effect is very different from a direct growth of HT-AlGaN IL. The a-type dislocations generated during the advancement of V trenches and their filling up propagate into the Al(0.25)Ga(0.75)N overlayer. The a-type dislocation density increases dramatically with the IL thickness, which greatly enhances the strain relaxation of Al(0.25)Ga(0.75)N. (c) 2008 American Institute of Physics.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据