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注意:仅列出部分参考文献,下载原文获取全部文献信息。Polarization dependence study of electroluminescence and absorption from InAs/GaAs columnar quantum dots
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APPLIED PHYSICS LETTERS (2007)
Simultaneous filling of InAs quantum dot states from the GaAs barrier under nonresonant excitation
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Extended electron states in lateral quantum dot molecules investigated with photoluminescence
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A. Salhi et al.
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被撤回的出版物: Nonresonant tunneling carrier transfer in bilayer asymmetric InAs/GaAs quantum dots - (Retracted article. See vol 7, art. no. 039904, 2006)
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High-performance three-layer 1.3-μm InAs-GaAs quantum-dot lasers with very low continuous-wave room-temperature threshold currents
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SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2005)
Vertical electronic coupling between InAs/InP quantum-dot layers emitting in the near-infrared range -: art. no. 111905
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Carrier relaxation in closely stacked InAs quantum dots
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Exciton dephasing in quantum dot molecules
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Spontaneous localization in InAs/GaAs self-assembled quantum-dot molecules
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Closely stacked InAs/GaAs quantum dots grown at low growth rate
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Control of exciton dynamics in nanodots for quantum operations
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Maximum modal gain of a self-assembled InAs/GaAs quantum-dot laser
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Vertical coupling and transition energies in multilayer InAs/GaAs quantum-dot structures
S Taddei et al.
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Carrier transfer and photoluminescence quenching in InAs/GaAs multilayer quantum dots
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Coupled InAs/GaAs quantum dots with well-defined electronic shells
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