4.6 Article

Impact of Cu contamination on the electrical properties of a direct silicon bonded (110)/(100) interfacial grain boundary

相关参考文献

注意:仅列出部分参考文献,下载原文获取全部文献信息。
Article Physics, Applied

Current transport characteristics across shallow hybrid-orientation silicon bonded interfaces

M. C. Wagener et al.

APPLIED PHYSICS LETTERS (2007)

Article Chemistry, Physical

Engineering metal-impurity nanodefects for low-cost solar cells

T Buonassisi et al.

NATURE MATERIALS (2005)

Article Physics, Applied

Nanometer-scale metal precipitates in multicrystalline silicon solar cells

SA McHugo et al.

JOURNAL OF APPLIED PHYSICS (2001)

Article Materials Science, Multidisciplinary

Electrical and structural properties of nanoscale NiSi2 precipitates in silicon

F Riedel et al.

PHYSICAL REVIEW B (2000)

Article Materials Science, Multidisciplinary

Atomic structure and electronic states of nickel and copper silicides in silicon

W Schröter et al.

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY (2000)