相关参考文献
注意：仅列出部分参考文献，下载原文获取全部文献信息。Fundamental band edge absorption in nominally undoped and doped 4H-SiC
P. Grivickas et al.
JOURNAL OF APPLIED PHYSICS (2007)
Defects and carrier compensation in semi-insulating 4H-SiC substrates
N. T. Son et al.
PHYSICAL REVIEW B (2007)
Alternative electronic parts for multiphonon-broadened photoionization cross sections of deep levels in SiC -: art. no. 113533
R Pässler
JOURNAL OF APPLIED PHYSICS (2005)
EPR and theoretical studies of negatively charged carbon vacancy in 4H-SiC -: art. no. 193202
T Umeda et al.
PHYSICAL REVIEW B (2005)
EPR identification of two types of carbon vacancies in 4H-SiC -: art. no. 121201
T Umeda et al.
PHYSICAL REVIEW B (2004)
EPR and theoretical studies of positively charged carbon vacancy in 4H-SiC -: art. no. 235212
T Umeda et al.
PHYSICAL REVIEW B (2004)
Photoionization cross-section analysis for a deep trap contributing to current collapse in GaN field-effect transistors
R Pässler
JOURNAL OF APPLIED PHYSICS (2004)
Signature of intrinsic defects in SiC:: Ab initio calculations of hyperfine tensors -: art. no. 193102
M Bockstedte et al.
PHYSICAL REVIEW B (2003)
Photoexcitation-electron-paramagnetic-resonance studies of the carbon vacancy in 4H-SiC
NT Son et al.
APPLIED PHYSICS LETTERS (2002)
Trapping effects in GaN and SiC microwave FETs
SC Binari et al.
PROCEEDINGS OF THE IEEE (2002)
The level position of a deep intrinsic defect in 4H-SiC studied by photoinduced electron paramagnetic resonance
ME Zvanut et al.
APPLIED PHYSICS LETTERS (2002)
Positively charged carbon vacancy in 6H-SiC: EPR study
VY Bratus et al.
PHYSICA B-CONDENSED MATTER (2001)
Carbon vacancy-related defect in 4H and 6H SiC -: art. no. 201201
NT Son et al.
PHYSICAL REVIEW B (2001)
分享论文
