期刊
JOURNAL OF APPLIED PHYSICS
卷 104, 期 10, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3021090
关键词
gallium compounds; III-V semiconductors; nanostructured materials; scanning electron microscopy; wide band gap semiconductors; X-ray diffraction
资金
- Grant Agency of Charles University in Prague [30807]
- Ministry of Education of the Czech Republic [MSM 0021620834]
- EPSRC-GB [EP/E000673/1]
- Engineering and Physical Sciences Research Council [EP/E000673/1] Funding Source: researchfish
- EPSRC [EP/E000673/1] Funding Source: UKRI
An x-ray method is described for the structure characterization of semiordered GaN nanorods. In contrast to other works based on synchrotron radiation, the method uses a standard x-ray laboratory equipment so that it is suitable for a rapid characterization of the nanorods in a technological laboratory. The method uses a grazing-incidence diffraction setup and it makes it possible to determine the mean size of the rods and their angular twist with respect to the crystalline substrate. The applicability of the method is demonstrated on a series of GaN nanorod samples and the parameters of the nanorods are compared with the results of scanning electron microscopy.
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