The initial atomic layer deposition of HfO2/Si(001) as followed in situ by synchrotron radiation photoelectron spectroscopy

We have grown HfO2 on Si(001) by atomic layer deposition (ALD) using HfCl4 and H2O as precursors. The early stages of the ALD were investigated with high-resolution photoelectron spectroscopy and x-ray absorption spectroscopy. We observed the changes occur-ring in the Si2p, O1s, Hf4f, Hf4d, and C12p core level lines after each ALD cycle up to the complete formation of two layers of HfO2. From the analysis of those variations, we deduced the growth properties of HfO2. The first layer consists of a sparse and Cl-contaminated oxide because of the incomplete oxidation, and the second layer is denser than the first one and with an almost stoichiometric O/Hf ratio. At the completion of the second layer, the x-ray absorption spectra revealed the change of the Hf-oxide chemical state due to the transition from the thin Hf-oxide to the bulklike HfO2. (c) 2008 American Institute of Physics. [DOI: 10.1063/1.2978362]