期刊
JOURNAL OF APPLIED PHYSICS
卷 104, 期 12, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3050332
关键词
elemental semiconductors; hopping conduction; nanostructured materials; percolation; semiconductor thin films; silicon
We investigate the electric field dependence of hopping conduction in 300 nm thick films of similar to 8 nm diameter silicon nanocrystals. The hopping conductivity sigma follows a ln(sigma)proportional to 1/T-1/2 dependence with temperature T, explained by a percolation hopping conduction model. At high fields F>similar to 1x10(5) V/cm, the hopping conductivity follows a ln(sigma)proportional to F-1/2 dependence. This dependence is investigated using the concept of effective temperature, introduced originally by Shklovskii for hopping conduction in disordered materials.
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