期刊
JOURNAL OF APPLIED PHYSICS
卷 104, 期 12, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3042242
关键词
amorphous semiconductors; Fourier transform spectra; infrared spectra; plasma CVD; semiconductor growth; semiconductor thin films; silicon compounds; wide band gap semiconductors
资金
- ICTP TRIL program
Hydrogenated amorphous silicon carbon alloy films of different carbon compositions were prepared by plasma enhanced chemical vapor deposition system using silane and methane with helium dilution and were characterized by structural and optical techniques to understand the microstructural and overall disorder in amorphous semiconductors. The study demonstrates that the increase of the microstructural disorder results in an increase in the overall disorder and the local defect density induced by carbon incorporation seems to dominate the overall defect structure of the network.
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