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注意:仅列出部分参考文献,下载原文获取全部文献信息。Quantum transport in In0.75Ga0.25As quantum wires
P. J. Simmonds et al.
APPLIED PHYSICS LETTERS (2008)
Growth-temperature optimization for low-carrier-density In0.75Ga0.25As-based high electron mobility transistors on InP
P. J. Simmonds et al.
JOURNAL OF APPLIED PHYSICS (2007)
Substrate temperature measurement using a commercial band-edge detection system
I. Farrer et al.
JOURNAL OF CRYSTAL GROWTH (2007)
Spintronics: Fundamentals and applications
I Zutic et al.
REVIEWS OF MODERN PHYSICS (2004)
Spin splitting of subband energies due to inversion asymmetry in semiconductor heterostructures
W Zawadzki et al.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2004)
Observation of e2/h conductance steps in a side-gate point contact on In0.75Ga0.25As/In0.75Al0.25As heterostructure
T Kita et al.
JOURNAL OF SUPERCONDUCTIVITY (2003)
Rashba spin-orbit coupling probed by the weak antilocalization analysis in InAlAs/InGaAs/InAlAs quantum wells as a function of quantum well asymmetry
T Koga et al.
PHYSICAL REVIEW LETTERS (2002)
Large spontaneous spin splitting in gate-controlled two-dimensional electron gases at normal In0.75Ga0.25As/In0.75Al0.25As heterojunctions
Y Sato et al.
JOURNAL OF APPLIED PHYSICS (2001)
Origin of beat patterns in the quantum magnetoresistance of gated InAs/GaSb and InAs/AlSb quantum wells
ACH Rowe et al.
PHYSICAL REVIEW B (2001)
Large Rashba splitting in InAs quantum wells due to electron wave function penetration into the barrier layers
D Grundler
PHYSICAL REVIEW LETTERS (2000)