期刊
JOURNAL OF APPLIED PHYSICS
卷 104, 期 11, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3041475
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资金
- MEST/KOSEF [R11-2005-048-00000-0]
- Korea Ministry of Knowledge and Economy
- Korea Science and Engineering Foundation (KOSEF) grant funded by the Korea government (MEST) [R01-2008-000-11994-0]
- Korea Evaluation Institute of Industrial Technology (KEIT) [10030559] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Foundation of Korea [R01-2008-000-11994-0, R11-2005-048-05002-0] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
The resistance switching characteristics of HfO2 thin films deposited by reactive sputtering were examined as a function of the annealing temperature. The results showed that the Pt/HfO2/Pt devices exhibited reversible and steady bistable resistance states [high-resistance state (HRS) and low-resistance state (LRS)]. Reproducible resistance switching from one state to another state or vice versa could be achieved by applying the appropriate voltage bias. The memory performances were related to the crystal structures of the HfO2 films, as confirmed by x-ray diffraction. From current-applied voltage analysis of the devices, LRS in the low electric field regime exhibited Ohmic conduction behavior, while HRS in the high electric field was followed by Poole-Frenkel conduction behavior. The resistance ratios of the two states were maintained in the range of around two orders of magnitude during the endurance test. In addition, it was confirmed that the resistance of the on and off states can be well maintained according to the time elapsed. (C) 2008 American Institute of Physics. [DOI: 10.1063/1.3041475]
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