期刊
NANOTECHNOLOGY
卷 26, 期 13, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/0957-4484/26/13/135201
关键词
graphene electrode; ITO; CdSe/CdS/ZnS; quantum dots; light emitting diodes
资金
- National 863 Program [2011AA050509]
- National Natural Science Foundation of China [61106039, 51272084, 61306078, 61225018, 61475026]
- Jilin Province Key Fund [20140204079GX]
- Shandong Natural Science Foundation [ZR2012FZ007]
- State Key Laboratory on Integrated Optoelectronics [IOSKL2012ZZ12]
- NSF [CHE-1338346]
- BORSF/SURE
Single layer graphene was employed as the electrode in quantum dot-light emitting diodes (QD-LEDs) to replace indium tin oxide (ITO). The graphene layer demonstrated low surface roughness, good hole injection ability, and proper work function matching with the poly (3,4-ethylenedioxythiophene): poly (styrenesulfonate) layer. Together with the hole transport layer and electron transport layer, the fabricated QD-LED showed good current efficiency and power efficiency, which were even higher than an ITO-based similar device under low current density. The result indicates that graphene can be used as anodes to replace ITO in QD-LEDs.
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