期刊
NANOTECHNOLOGY
卷 26, 期 49, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/0957-4484/26/49/495501
关键词
nanowire FET; liquid-gating; low-frequency noise; ionic screening
资金
- Ministry of Science and Technology of Taiwan [103-2221-E-492-002, 104-2221-E-492-008-MY2]
- Ministry of Science and Technology of Taiwan
The ionic screening effect plays an important role in determining the fundamental surface properties within liquid-semiconductor interfaces. In this study, we investigated the characteristics of low-frequency drain current noise in liquid-gated nanowire (NW) field effect transistors (FETs) to obtain physical insight into the effect of ionic screening on low-frequency current fluctuation. When the NW FET was operated close to the gate voltage corresponding to the maximum transconductance, the magnitude of the low-frequency noise for the NW exposed to a low-ionic-strength buffer (0.001 M) was approximately 70% greater than that when exposed to a high-ionic-strength buffer (0.1 M). We propose a noise model, considering the charge coupling efficiency associated with the screening competition between the electrolyte buffer and the NW, to describe the ionic screening effect on the low-frequency drain current noise in liquid-gated NW FET systems. This report not only provides a physical understanding of the ionic screening effect behind the low-frequency current noise in liquid-gated FETs but also offers useful information for developing the technology of NW FETs with liquid-gated architectures for application in bioelectronics, nanosensors, and hybrid nanoelectronics.
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