期刊
NANOTECHNOLOGY
卷 26, 期 39, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/0957-4484/26/39/391001
关键词
resistive switching; volatile; nonvolatile
资金
- National Natural Science Foundation of China [61574070, 61306148]
- Specialized Research Fund for the Doctoral Program of Higher Education of China [20130211120010]
Diode-like volatile resistive switching as well as nonvolatile resistive switching behaviors in a Cu/ZrO2/TiO2/Ti stack are investigated. Depending on the current compliance during the electroforming process, either volatile resistive switching or nonvolatile resistive switching is observed. With a lower current compliance (< 10 mu A), the Cu/ZrO2/TiO2/Ti device exhibits diode-like volatile resistive switching with a rectifying ratio over 10(6). The permanent transition from volatile to nonvolatile resistive switching can be obtained by applying a higher current compliance of 100 mu A. Furthermore, by using different reset voltages, the Cu/ZrO2/TiO2/Ti device exhibits multilevel memory characteristics with high uniformity. The coexistence of nonvolatile multilevel memory and diode-like volatile resistive switching behaviors in the same Cu/ZrO2/TiO2/Ti device opens areas of applications in high-density storage, logic circuits, neural networks, and passive crossbar memory selectors.
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