期刊
NANOSCALE
卷 7, 期 14, 页码 5974-5980出版社
ROYAL SOC CHEMISTRY
DOI: 10.1039/c5nr01205h
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资金
- Foundation for Innovative Research Groups of the National Natural Science Foundation of China [61421002]
- Program for New Century Excellent Talents in University [NCET-13-0092]
- National Natural Science Foundation of China [61106040, 61475030]
- State Key Laboratory of Electronic Thin Film and Integrated Device Program [KFJJ201408]
- Central University Basic Scientific Research Business Expenses [2672013ZYGX2013J060, 2672013ZYGX2013J061]
We demonstrate the synthesis of large-area monolayer WS2 films by chemical vapor deposition (CVD) and investigate their photoresponse properties by fabricating n-type field effect transistors (FETs) with Al as the ohmic contact. Our CVD-grown monolayer WS2 shows an electron mobility of 0.91 cm(2) V-1 s(-1) and an ON/OFF ratio of 10(6), indicating its comparable electronic properties to the mechanically exfoliated flake sample. In a vacuum, by applying a gate bias (60 V), the responsivity of the monolayer WS2 phototransistor can increase up to 18.8 mA W-1 and a decent sub-second level response time can be maintained. In contrast, in air, it shows a very fast response time of less than 4.5 ms, but at the cost of responsivity reduction to 0.2 mu A W-1. Such a distinctive ambient-sensitive photo-detecting performance can be well-explained by the pronounced effect of charge-acceptor-like O-2/H2O molecule adsorption/desorption on the photocarrier transport. Our CVD-grown high quality monolayer WS2 may pave the way for developing industrial-scale optoelectronic devices for photo-detecting and chemical sensing applications.
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