期刊
JOURNAL OF ALLOYS AND COMPOUNDS
卷 774, 期 -, 页码 11-17出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.jallcom.2018.09.381
关键词
Ga2O3; Eu(III)-doped; Hydrogen evolution reaction; Photoluminescence image; CO oxidation
资金
- National Research Foundation of Korea (NRF) - Korea government (MEST) [2016R1D1A3B04930123]
- National Research Foundation of Korea [2016R1D1A3B04930123] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Gallium oxide has extensively been applied to various areas of optoelectronic devices, catalysts and displays. Herein, bare and Eu(III)-doped GaOOH, alpha- and beta-gallium oxide (Ga2O3) nanorods were synthesized by the hydrothermal method and post-thermal treatment process. The physicochemical properties were fully examined by scanning electron microscopy, X-ray diffraction crystallography, Fourier-transform infrared spectroscopy, and UV-visible absorption. For diverse applications, we first performed CO oxidation tests, 2D/3D photoluminescence image spectroscopy, and electrochemical hydrogen evolution reaction. The unique results provide valuable information for the development of Ga oxide-based materials. (C) 2018 Elsevier B.V. All rights reserved.
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