期刊
JOURNAL OF ALLOYS AND COMPOUNDS
卷 768, 期 -, 页码 800-809出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.jallcom.2018.07.224
关键词
ZnO thin films; RF sputtering; Plasma immersion ion implantation; Phosphorus; Free-to-bound emission
资金
- Department of Science and Technology, India
To study the effects of implantation on ZnO thin films grown on Si substrates, we have subjected it to phosphorous ion implantation for 10, 40, and 70 s through plasma immersion ion implantation and rapid thermal annealing. Low-temperature photoluminescence spectra of the as-implanted samples exhibited a reduction in the donor-bound exciton peak at 3.36 eV with implantation time. The photoluminescence spectrum of the 70 s implanted 1000 degrees C-annealed sample confirmed acceptor-type doping. X-ray diffraction measurements showed a reduction in the c-axis length along the <002> direction with implantation time, evidencing phosphorous-ion incorporation in the implanted films, which was further confirmed by the blue shifting of the E2 high peak in the Raman spectra. XPS measurements affirmed the presence of the P 2p peak, a signature of P-O bond, and confirmed the substitution of Zn atoms by P atoms and the subsequent formation of the Pzn-2Vzn complex essential for acceptor-type conductivity. (C) 2018 Elsevier B.V. All rights reserved.
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