期刊
JOURNAL OF ALLOYS AND COMPOUNDS
卷 598, 期 -, 页码 79-84出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.jallcom.2014.01.172
关键词
Thermoelectric material; Thin films; Vapor deposition; Electronic properties
资金
- 'Agence de l'Environnement et de la Maitrise de l'Energie' [0774C0100]
- Schneider Electric France
Transport properties of as-deposited and annealed Bi0.5Sb1.5Te3 (p-type) and Bi2Te2.7Se0.3 (n-type) thin films have been studied. The p-type and n-type thin films were annealed between 150 and 300 degrees C. Temperature dependence of the transport properties and effect of annealing are described for both types. The role of the crystallization and the defects in relation with the atomic composition are studied for the different annealed thin films. (C) 2014 Elsevier By. All rights reserved.
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