期刊
NANOSCALE
卷 7, 期 47, 页码 20249-20255出版社
ROYAL SOC CHEMISTRY
DOI: 10.1039/c5nr05084g
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资金
- National High Technology Research and Development Program of China (863 Program) [2013AA031903]
- youth 973 program [2015CB932700]
- National Natural Science Foundation of China [51222208, 51290273, 91433107, 61178051, 61321063]
- Ministry of Education of China [20123201120026]
- ARC DECRA [DE120101569]
- DP [DP140101501]
- Natural Science Foundation of Jiangsu Province [BK20130328]
- China Postdoctoral Science Foundation [2014M551654]
- Jiangsu Province Postdoctoral Science Foundation [1301020A]
- Postdoctoral Science Foundation of China [7131701013]
Graphene's remarkable electrical and optical properties afford great potential for constructing various optoelectronic devices, including modulators, photodetectors and pulse lasers. In particular, graphene-based optical modulators were demonstrated to be featured with a broadband response, small footprint, ultrafast speed and CMOS-compatibility, which may provide an alternative architecture for light-modulation in integrated photonic circuits. While on-chip graphene modulators have been studied in various structures, most of them are based on a capacitance-like configuration subjected to complicated fabrication processes and providing a low yield of working devices. Here, we experimentally demonstrate a new type of graphene modulator by employing graphene's electrical and thermal properties, which can be achieved with a simple fabrication flow. On a graphene-coated microring resonator with a small active area of 10 mu m(2), we have obtained an effective optical modulation via thermal energy electrically generated in a graphene layer. The resonant wavelength of the ring resonator shifts by 2.9 nm under an electrical power of 28 mW, which enables a large modulation depth of 7 dB and a broad operating wavelength range of 6.2 nm with 3 dB modulation. Due to the extremely high electrical and thermal conductivity in graphene, the graphene thermo-optical modulator operates at a very fast switching rate compared with the conventional silicon thermo-optic modulator, i.e. 10%-90% rise (90%-10% fall) time of 750 ns (800 ns). The results promise a novel architecture for massive on-chip modulation of optical interconnects compatible with CMOS technology.
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