期刊
JOURNAL OF ALLOYS AND COMPOUNDS
卷 582, 期 -, 页码 323-327出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.jallcom.2013.07.127
关键词
Chalcogenide glass; Crystallization; Positron annihilation; Trapping; Annealing
资金
- State Agency on Science, Innovation and Informatization of Ukraine
- State Agency on Science, Innovation and Informatization of French
- Science and Technology Centre in Ukraine [5721]
Crystallization behaviour of 80GeSe(2)-20Ga(2)Se(3) glass caused by thermal annealing at 380 degrees C for 10, 25 and 50 h are studied using X-ray diffraction and positron annihilation lifetime spectroscopy. It is shown that the structural changes caused by crystallization can be adequately described by positron trapping modes determined within two-state model. The observed changes in defect-related component in the fit of experimental positron lifetime spectra for annealed glasses testifies in a favour of structural fragmentation of larger free volume entities into smaller ones with preceding nucleation in the initial stage of thermal annealing. Because of strong deviation in defect-free bulk positron lifetime from corresponding additive values proper to boundary constituents, the studied glasses cannot be considered as typical representatives of pseudo-binary cut-section. (C) 2013 Elsevier B.V. All rights reserved.
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