期刊
NANOSCALE
卷 7, 期 21, 页码 9935-9944出版社
ROYAL SOC CHEMISTRY
DOI: 10.1039/c4nr07408d
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资金
- Chinese Academy of Sciences [XDA09020402]
- National Key Basic Research Program of China [2013CBA01900, 2011CBA00607, 2011CB932804]
- National Integrated Circuit Research Program of China [2009ZX02023-003]
- National Natural Science Foundation of China [61176122, 61106001, 61261160500, 61376006, 11104109, 11374119]
- Science and Technology Council of Shanghai [13DZ2295700, 13ZR1447200]
- Youth Innovation Promotion Association of CAS [2015185]
Phase change materials, successfully used in optical data-storage and non-volatile electronic memory, are well-known for their ultrafast crystallization speed. However, the fundamental understanding of their crystallization behavior, especially the nucleation process, is limited by present experimental techniques. Here, real-time radial distribution functions (RDFs), derived from the selected area electron diffractions, are employed as structural probes to comprehensively study both nucleation and subsequent growth stages of Ti-doped Sb2Te3 (TST) materials in the electron-irradiation crystallization process. It can be found that the incorporation of Ti atoms in Sb2Te3 forms wrong bonds such as Ti-Te, Ti-Sb, breaks the originally ordered atomic arrangement and diminishes the initial nucleus size of the as-deposited films, which results in better thermal stability. But these nuclei hardly grow until their sizes exceed a critical value, and then a rapid growth period starts. This means that an extended nucleation time is required to form the supercritical nuclei of TST alloys with higher concentration. Also, the increasing formation of four-membered rings, which served as nucleation sites, after doping excessive Ti is responsible for the change of the crystallization behavior from growth-dominated to nucleation-dominated.
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