期刊
NANOSCALE
卷 7, 期 19, 页码 8695-8700出版社
ROYAL SOC CHEMISTRY
DOI: 10.1039/c5nr01072a
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资金
- Hong Kong Research Grant Council [PolyU 252001/14E]
- Hong Kong Polytechnic University [1-ZVCG, G-UC72]
- AOE [AOE/P-04/08-1]
MoS2 and other atomic-level thick layered materials have been shown to have a high potential for outperforming Si transistors at the scaling limit. In this work, we demonstrate a MoS2 transistor with a low voltage and high ON/OFF ratio. A record small equivalent oxide thickness of similar to 1.1 nm has been obtained by using ultra high-k gate dielectric Pb(Zr0.52Ti0.48) O-3. The low threshold voltage (< 0.5 V) is comparable to that of the liquid/gel gated MoS2 transistor. The small sub-threshold swing of 85.9 mV dec(-1), the high ON/OFF ratio of similar to 10(8) and the negligible hysteresis ensure a high performance of the MoS2 transistor operating at 1 V. The extracted field-effect mobility of 1-10 cm(2) V-1 s(-1) suggests a high crystalline quality of the CVD-grown MoS2 flakes. The combination of the two-dimensional layered semiconductor and the ultra high-k dielectric may enable the development of low-power electronic applications.
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