4.7 Article

Electronic transport and dielectric properties of low-dimensional structures of layered transition metal dichalcogenides

期刊

JOURNAL OF ALLOYS AND COMPOUNDS
卷 587, 期 -, 页码 459-467

出版社

ELSEVIER SCIENCE SA
DOI: 10.1016/j.jallcom.2013.10.129

关键词

Transition metal compounds; Electronic band structure; Electronic transport; Dielectric response; Electron energy loss spectra

资金

  1. CSIR New Delhi

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We present first principle study of the electronic transport and dielectric properties of nanowires and nanoribbons of layered transition metal dichalcogenides (LTMDs), MX2 (M = Mo, W; X = S, Se, Te). The studied configuration shows metallic/semiconducting nature and the states around the Fermi energy are mainly contributed by the d orbitals of metal atoms. Zero-bias transmission show 1G(0) conductance for the ribbons of MoS2 and WS2; 2G(0) conductance for MoS2, WS2, WSe2 wires, and ribbons of MoTe2 and WTe2; and 3G(0) conductance for WSe2 ribbon. The studied configurations show non-linear current-voltage (I-V) characteristics. Negative differential conductance (NDC) has also been observed for the nanoribbons of the selenides and tellurides of both Mo and W. Furthermore, additional plasmonic features below 5 eV energy have been observed for both wires and ribbons as compared to the corresponding monolayers, which is found to be red-shifted on going from nanowires to nanoribbons. (C) 2013 Elsevier B.V. All rights reserved.

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