Room and high temperature toughening in directionally solidified B4C-TiB2 eutectic composites by Si doping

Directionally solidified B4C-TiB2 eutectics doped with different Si contents were prepared by floating zone method. Silicon doping (up to 3 vol.%) promotes a more coherent interface between B4C matrix and TiB2 inclusions, a decrease of the spacing between TiB2 (when solidification rate is constant), and formation of a more uniform morphology with thinner inclusions. These features lead to simultaneous enhancement of Vickers hardness (HV), fracture toughness (K-1c) and bending strength (sigma) when compared with Si-free B4C-TiB2 eutectics. For our materials, the average HV, K-1c and sigma were 45.2 GPa, 7.04 MPa m(1/2), and 460 MPa at room temperature or 487 MPa at 1600 degrees C, respectively. The values of sigma at indicated temperatures are approximately twice higher than for the Si-free B4C-TiB2 eutectic composites. (C) 2013 Elsevier B.V. All rights reserved.