期刊
NANOSCALE
卷 7, 期 29, 页码 12535-12541出版社
ROYAL SOC CHEMISTRY
DOI: 10.1039/c5nr02953h
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资金
- National Natural Science Foundation of China [91233203]
- State Key Laboratory of Opto-electronic Materials and Technologies
Broadband photodetection is central to various technological applications including imaging, sensing and optical communications. On account of their Dirac-like surface state, Topological insulators (TIs) are theoretically predicted to be promising candidate materials for broadband photodetection from the infrared to the terahertz. Here, we report a vertically-constructed ultra-broadband photodetector based on a TI Bi2Te3-Si heterostructure. The device demonstrated room-temperature photodetection from the ultraviolet (370.6 nm) to terahertz (118 mu m) with good reproducibility. Under bias conditions, the visible responsivity reaches ca. 1 AW(-1) and the response time is better than 100 ms. As a self-powered photodetector, it exhibits extremely high photosensitivity approaching 7.5 x 10(5)cm(2) W-1, and decent detectivity as high as 2.5 x 10(11) cm Hz(1/2) W-1. In addition, such a prototype device without any encapsulation suffers no obvious degradation after long-time exposure to air, high-energy UV illumination and acidic treatment. In summary, we demonstrate that TI-based heterostructures hold great promise for addressing the long lasting predicament of stable room-temperature high-performance broadband photodetectors.
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