Cu-doping effects on the physical properties of cadmium sulfide thin films

Thin films of CdS were fabricated by close spaced sublimation technique under vacuum of similar to 10(-5) mbar at a source temperature of 550 degrees C for various periods of time. These as-deposited thin films were immersed into Cu (NO3)(2) solution at 80 +/- 5 degrees C for variety of time to ensure Cu doping. The structural, surface, optical and electrical analyses were completed with the help of X-Ray Diffraction, Scanning Electron Microscope with Energy Dispersive X-Ray, UV-VIS-NIR Spectrophotometer and Hall Measurement System respectively. The transmittance of as-deposited sample is reduced from 80% to 30% with increasing copper immersion time. The mobility increased from 6.67 x 10(1) to 1.15 x 10(3) cm(2)/Vs due to the change in the carrier concentration. (C) 2011 Elsevier B.V. All rights reserved.