期刊
JOURNAL OF ALLOYS AND COMPOUNDS
卷 519, 期 -, 页码 140-143出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.jallcom.2011.12.146
关键词
BaTiO3 film; Rectifying; Schottky barrier; Current mechanism
资金
- National Natural Science Foundation of China [50972040]
- Fund of international cooperation project of Wuhan City and Hubei Province [201070934339, 2010BFA010]
- Fund of Morning Program [200950431161]
The 15-nm-thickness BaTiO3 (BTO) epitaxial film was prepared on the Nb-doped SrTiO3 (NSTO) single crystal substrate using pulsed laser deposition technique. The morphology and structure of the film was measured by the AFM, TEM and XRD, respectively. The current-voltage curves show abnormal backward diode-like rectifying behavior at room temperature, which was discussed using the Schottky barrier model taking into account the movement of oxygen vacancies. The leakage currents under reverse bias were excellently fitted by the Poole-Frenkel (P-F) emission and Fowler-Nordheim (F-N) tunneling mechanisms, respectively. At forward bias, the current was fitted by the space-charge-limited current mechanism. The C-V curves indicate that there is a positive build-in voltage (about 0.56 V) in the Pt/BTO/NSTO structure, which confirms the backward rectifying behavior. (C) 2012 Elsevier B. V. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据