期刊
JOURNAL OF ALLOYS AND COMPOUNDS
卷 522, 期 -, 页码 69-73出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.jallcom.2012.01.078
关键词
Al-doped ZnO; Base pressure; RF magnetron sputtering; Zn-O bond; Oxygen vacancy; Figure of merit
Al-doped ZnO (AZO) thin films were prepared on glass substrates by RF magnetron sputtering at room temperature. The dependence of electrical, structural, and optical properties on the base pressure was investigated. The lower base pressures for AZO thin film deposition resulted in improved electrical conductivity owing to an increase in the carrier concentration and mobility, giving a resistivity as low as 7.3 x 10(-4) Omega cm. The improved conductivity is attributed to increased Zn-O bond formation and a subsequent increase in oxygen vacancies as the base pressure is reduced. The average transmittance of all the thin films deposited was above 84% in the visible spectrum. With decreasing base pressure, the figure of merit for the AZO thin film improved linearly. The control of base pressure plays a major role in the subsequent properties of AZO thin films deposited at room temperature. (C) 2012 Elsevier B. V. All rights reserved.
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