4.7 Article

Bismuth segregation enhances intermetallic compound growth in SnBi/Cu microelectronic interconnect

期刊

JOURNAL OF ALLOYS AND COMPOUNDS
卷 509, 期 5, 页码 1785-1789

出版社

ELSEVIER SCIENCE SA
DOI: 10.1016/j.jallcom.2010.10.040

关键词

Bi segregation; Interconnect; Kinetics; Intermetallic compound growth

资金

  1. National Science Foundation of China [50871026]
  2. 111 Project [B07015]
  3. Foundation for the Author of National Excellent Doctoral Dissertation of PR China [200745]
  4. Program for New Century Excellent Talents in University [NCET-06-0288]
  5. Fundamental Research Funds for the Central Universities [N090109001]

向作者/读者索取更多资源

There was a sudden increase of intermetallic compound (IMC) Cu6Sn5 growth rate in the eutectic Sn58wt. %Bi/Cu joint during aging process. With aging time increasing, Bi accumulated at the Cu3Sn/Cu interface and gradually induced the fracture mode of the joint to change from ductile to brittle one along this interface. Bi segregation enhanced IMC Cu6Sn5 growth by means of promoting the interfacial reaction at Cu3Sn/Cu interface, which was concluded from IMCs (Cu6Sn5 and Cu3Sn) growth behavior for pure Sn/Cu and Sn10wt. %Bi/Cu interconnects at the same temperature. (C) 2010 Elsevier B.V. All rights reserved.

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