4.8 Article

Scaling of graphene integrated circuits

期刊

NANOSCALE
卷 7, 期 17, 页码 8076-8083

出版社

ROYAL SOC CHEMISTRY
DOI: 10.1039/c5nr01126d

关键词

-

资金

  1. Fondazione Cariplo [2011-0373]
  2. EU FP7 Graphene Flagship [604391]
  3. PRIN project GRAF
  4. United States National Science Foundation (NSF)
  5. Air Force Office of Scientific Research (AFOSR)

向作者/读者索取更多资源

The influence of transistor size reduction (scaling) on the speed of realistic multi-stage integrated circuits (ICs) represents the main performance metric of a given transistor technology. Despite extensive interest in graphene electronics, scaling efforts have so far focused on individual transistors rather than multi-stage ICs. Here we study the scaling of graphene ICs based on transistors from 3.3 to 0.5 mu m gate lengths and with different channel widths, access lengths, and lead thicknesses. The shortest gate delay of 31 ps per stage was obtained in sub-micron graphene ROs oscillating at 4.3 GHz, which is the highest oscillation frequency obtained in any strictly low-dimensional material to date. We also derived the fundamental Johnson limit, showing that scaled graphene ICs could be used at high frequencies in applications with small voltage swing.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.8
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据