Influence of substrate temperature on mechanical, optical and electrical properties of ZnO:Al films

The Al-doped zinc oxide (ZnO:Al) films were prepared on quartz glass flakes and silicon wafers by radio frequency (RF) magnetron sputtering which uses an aluminum-doped zinc oxide ceramic target. Meanwhile, their properties were characterized by scanning electron microscopy, X-ray diffraction, infrared-UV spectrophotometry, resistance measurement, nano-scratch and indentation test. Evolutions of the structural, optical, electrical and mechanical properties of the ZnO:Al films as a function of substrate temperatures ranging from room temperature to 400 degrees C were analyzed. The results indicate that the ZnO:Al films with a low resistivity value of 4.97 x 10(-4) Omega cm, a relatively higher adhesion and a high transparency above 90%, can be prepared at a substrate temperature of 400 degrees C. (C) 2010 Elsevier B.V. All rights reserved.