期刊
JOURNAL OF ALLOYS AND COMPOUNDS
卷 498, 期 1, 页码 52-56出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.jallcom.2010.03.068
关键词
Nitride material; Chemical synthesis; Crystal structure; X-ray diffraction (XRD); Electron microscopy (TEM and SEM); Photoluminescence
资金
- Department of Science and Technology
- CSIR, Government of India, New Delhi
Gallium nitride (GaN) nanocrystals were synthesized by nitridation of Ga-EDTA (ethylene diamine tetra acetic acid) complexes at different temperatures starting from 600 to 900 degrees C. X-ray diffraction analysis, Fourier transform infrared spectroscopy and Raman studies revealed that the compound synthesized at 900 degrees C consists of single-phase GaN nanocrystals with wurtzite structure. The change in morphology of the GaN crystals at different temperatures was observed using scanning electron microscopy. The transmission electron microscopy showed the average size of the crystalline particles to be similar to 20 nm. The room temperature photoluminescence exhibits band-edge emission of GaN at 3.46 eV for all the samples. The present study demonstrates that the nitridation of Ca-EDTA complex method has significant potential for the synthesis of GaN nanocrystals as a simple and inexpensive method. (C) 2010 Published by Elsevier B.V.
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