期刊
JOURNAL OF ALLOYS AND COMPOUNDS
卷 467, 期 1-2, 页码 567-571出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.jallcom.2007.12.060
关键词
Thin films; Crystal growth; Dielectric response
资金
- Ministry of Sciences and Technology of China [2002CB613304]
- Shanghai Nano Fundamental Committee [05nm05028]
- New Century Excellent Talents in University (NCET)
- Special Research Fund [20060247003]
Ferroelectric BaTiO3 thin films were prepared by sol-gel-ethanol thermal technique (SGET) and sol-gel-hydrothermal technique (SGHT), respectively, at 200 degrees C. The microstructure characteristics proved that the prepared BaTiO3 thin films were both in the perovskite phase and had polycrystalline structure. The frequency dependences of nonlinear dielectric properties of the films were studied. The two films exhibited a high and very stable insulating characteristic against biasing. The films prepared by SHET tend to have a higher dielectric constant, loss, leakage current density and polarization than that of the films prepared by SGHT. The nonlinear variation of dielectric properties under external de bias field was tentatively explained. (C) 2008 Published by Elsevier B.V.
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