期刊
JOURNAL OF ALLOYS AND COMPOUNDS
卷 474, 期 1-2, 页码 401-405出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.jallcom.2008.06.107
关键词
Thin films; CuAlO2; Transparent conducting oxides; Sputtering
资金
- Korean Governmen [KRF-2006-311-DO0636]
- Second Stage of Brain Korea
Copper aluminum oxide films were prepared by direct current (dc) reactive magnetron sputtering under various substrate temperatures in the range of 303-648 K and systematically studied their physical properties. The physical properties of the films were strongly affected by the substrate temperature. The films formed at substrate temperatures <373 K were amorphous while those deposited at higher substrate temperatures (>= 373 K) were polycrystalline in nature. The electrical properties of the films enhanced with substrate temperature due to the improved crystallinity. The Hall mobility of 9.4 cm(2)/V s and carrier concentration of 3.5 x 10(17) cm(-3) were obtained at the substrate temperature of 573 K. The optical band gap of the films decreased from 3.87 to 3.46 eV with the increase of substrate temperature from 373 to 573 K. (C) 2008 Elsevier B.V. All rights reserved.
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